• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    The present invention relates to a method of texturing a semiconductor substrate for a solar cell, the method of spraying or screen printing a protector on the semiconductor substrate to apply the protector to a portion of the semiconductor substrate, the isotropic etching solution of the partially coated semiconductor substrate And immersing in a portion, to which the protector is not partially applied, to etch and remove the protector. The method is capable of texturing a semiconductor substrate for solar cells with an inexpensive isotropic etching solution and a simple process, the textured semiconductor substrate having a very low reflectance of about 9% compared to the conventional method (reflectance: 11-29%). Therefore, a highly efficient solar cell can be manufactured.
    公开号:KR20020059185A
    申请号:KR1020010000251
    申请日:2001-01-03
    公开日:2002-07-12
    发明作者:박상욱；김동섭；이수홍
    申请人:김순택；삼성에스디아이 주식회사；
    IPC主号:
    专利说明:

    Texturing method of semiconductor substrate for solar cell {METHOD OF TEXTURING SEMICONDUCTOR SUBSTRATE FOR SOLAR CELL}
    [3] [Industrial use]
    [4] The present invention relates to a texturing method of a semiconductor substrate for a solar cell, and more particularly, to a texturing method of a semiconductor substrate for a solar cell capable of texturing a semiconductor substrate simply and economically.
    [5] [Prior art]
    [6] A solar cell is a photovoltaic device that converts photons into electrical energy using a semiconductor. The principle of converting sunlight into electrical energy in a solar cell uses the p-n junction principle of a semiconductor. In more detail, semiconductors such as Si, Ge, and As have a conduction band and a valence band, and a forbidden band, in which an electron cannot exist between the valence band and the conduction band. ) And the width of this ban is called the energy gap. When the energy corresponding to the energy gap, ie, light, is irradiated to the semiconductor, photons are absorbed by the semiconductor, and the absorbed photons form a pair of free electrons and holes in a stable state in the substrate. can be changed into a hole. Since the generated electrons and holes exist stably for a certain time of life, the electrons and positively charged holes are separated within this time and then recombined from the outside through the electrode terminals to consume current. It becomes usable.
    [7] In addition, by doping a p-type impurity in one portion of the semiconductor crystal and an n-type impurity in the remaining portion, a p-type semiconductor and an n-type semiconductor are formed in one crystal, and the metallic interface between the p-type semiconductor and the n-type semiconductor is formed. Is called a pn junction. Since the p-type semiconductor is doped with a trivalent acceptor atom, many holes are generated, and since the n-type semiconductor is doped with a pentavalent donor atom, many electrons are formed.
    [8] Therefore, in the pn junction, as the hole concentrations and electron concentrations of the p-type and n-type semiconductors are different, the holes diffuse toward the n-type semiconductor and the p-type semiconductor, so that the acceptor charged with (-) toward the p-type semiconductor Only the ions remain, only the positively charged donor ions remain on the n-type semiconductor side, and ± space charges are generated near the junction, resulting in the diffusion of holes and electrons, resulting in thermal equilibrium. . When an external energy source is applied to the pn junction that has reached this thermal equilibrium state, the p-type semiconductor shows a positive voltage and the n-type semiconductor shows a negative voltage, so that current can be obtained as the current flows only in one direction. Can be.
    [9] On this principle, the performance of a solar cell capable of converting sunlight into electrical energy generally measures the efficiency at which light energy is converted into electrical energy, which is a ratio of the amount of incident light at the electrical output of the solar cell, usually It is expressed in%.
    [10] Therefore, much research is being conducted to increase the efficiency of solar cells, and one method is to use a method of maximizing light absorption by texturing the wafer surface. As the texturing method, a chemical etching method, a plasma etching method, a mechanical scribing method, a photolithography method, and the like are used.
    [11] Among the above methods, the chemical etching method has been spotlighted as a method capable of texturing a large amount of wafers at a low price in a short time. Chemical etching methods include isotropic etching and anisotropic etching, and an example of an isotropic etching method is an oxidizing solution containing fluorine ion in US Pat. No. 5,949,123. Is used to etch polycrystalline silicon. However, this method is not applied because the etched surface is formed so that the sunlight does not hit more than two times, and actually has a problem of poor reflectance. An example of an anisotropic etching method is described in US Pat. No. 5,804,090, which describes a hydrazine hydrate serving as a protector and an aqueous metal hydroxide solution as an etchant. The anisotropic etching method is known to be a good method for expensive single crystals. However, in low-cost polycrystalline wafers with various orientations, since sunlight does not strike the wafer surface more than once, it is difficult to apply it as the reflectance decreases. Therefore, it is urgent to develop a chemical etching method applicable to a polycrystalline wafer.
    [12] The plasma etching method is a method of forming a pattern by applying a photoresist to a wafer, etching using plasma, and then removing the mask layer. For example, K. Shirasawa et al. (Proc. 12th EPVSEC, 1994, p. 757). It shows a fairly good reflectance, but it takes a long time and is less commercially available because expensive equipment is required. In addition, the mechanical scribing method is a method of forming a groove on the surface of the wafer and then texturing using a chemical etching method, an example of which is described in US Patent No. 5,704,992. The mechanical scribing method is difficult to commercial production and difficult to apply to the thin film because the work takes a long time. The photo printing method is a method of forming a pattern by coating a photoresist on a wafer with an oxide film and texturing it through an isotropic / isotropic etching method. This is a very expensive process, making commercial application difficult in making polycrystalline solar cells.
    [13] SUMMARY OF THE INVENTION The present invention has been made to solve the above problems, and an object of the present invention is to provide a texturing method of silicon for solar cells, which can economically texture silicon using a simple process.
    [14] Another object of the present invention is to provide a texturing method of silicon for solar cells that can be textured to have a low reflectance.
    [1] 1 is a process diagram schematically illustrating the texturing process of the present invention.
    [2] 2 is a spray deposition system used in the texturing process of the present invention.
    [15] In order to achieve the above object, the present invention is to apply the protector to a portion of the semiconductor substrate by spraying or screen printing the protector on the semiconductor substrate; Etching the portion where the protector is not partially coated by immersing the semiconductor substrate partially coated with the protector in an isotropic etching solution; It provides a texturing method of a semiconductor substrate for a solar cell comprising the step of removing the protector.
    [16] Hereinafter, the present invention will be described in more detail.
    [17] The present invention relates to a method of texturing a semiconductor substrate used to make a solar cell. The texturing process is a process for increasing the absorption of light by forming the surface of a semiconductor substrate like a surface of a fabric unevenly.
    [18] The texturing process of the present invention will be described with reference to FIG. 1. First, a protector 3 is sprayed or screen printed onto the raw semiconductor substrate 1 to apply the protector to a portion of the raw semiconductor substrate. (A of FIG. 1). At this time, the coating material is applied in the form of island (island).
    [19] When using the spray method is, through a nozzle with a N 2, O 2 or a carrier gas such as air to the protector in solution form is applied to the semiconductor substrate material. At this time, the viscosity of the protector solution and the gas flow rate may be adjusted to the extent that the protector can form an appropriate island on the semiconductor substrate, and is not particularly limited. In addition, what is necessary is just to adjust suitably the distance and nozzle diameter between a nozzle and a board | substrate according to the kind of protector to be used.
    [20] The spray process is preferably carried out for a time such that the protector can apply the surface of the semiconductor substrate no more than 10% by volume of the total area. If the uncoated portion exceeds 10% by volume of the total semiconductor substrate area, the reflectivity of the semiconductor substrate obtained by the final texturing is increased, which is not preferable.
    [21] While performing the said spraying process, the drying process of applying heat may be performed simultaneously, and after performing a spraying process, the process of heating and drying a semiconductor substrate in which the protector was apply | coated to one part may be performed. An example of the case where the spray process and the drying process are performed simultaneously is a method of using a spray deposition system as shown in FIG. 2. Among the above methods, it is preferable to simultaneously perform the spraying step and the drying step, because they have advantages in time. This drying process removes the solvent from the protector solution, leaving only the protector on the semiconductor substrate.
    [22] In the case of using the screen printing method, the protector solution is applied to the raw material semiconductor substrate in an island form, and in this case, it is sufficient to adjust the viscosity of the protector solution to be applied in an island form. In the case of using the screen printing method, after the screen printing is carried out, a drying process is applied to remove the solvent from the protector solution.
    [23] Even when the screen printing method is used, it is preferable that the area of the portion of the raw material semiconductor substrate to which the protector is not applied does not exceed 10% of the total raw material semiconductor substrate area.
    [24] In the protector solution, the solvent may dissolve the protector, and any solvent may be used as long as it is easily volatilized in a drying process, and examples thereof include alcohols such as methanol and ethanol, but are not limited thereto.
    [25] The semiconductor substrate may be a single crystal or polycrystalline substrate formed of a material that can be used as a semiconductor of Si or Ge. As the protector, an organic material or an inorganic material that is easy to apply, does not generate a chemical reaction with respect to the etching solution, is easy to be removed after etching, and which can be endured in a later heat treatment process. Representative examples of such materials include photoresist, silicon oxide, TiO 2 or NaNO 2 .
    [26] The semiconductor substrate 1 having the protector 3 coated thereon is immersed in an isotropic etching solution 5 (b of FIG. 1). At this time, the semiconductor substrate of the portion to which the protector is not applied is etched away by an isotropic etching solution. The immersion time is preferably performed for 1 to 10 minutes. If the immersion time exceeds 10 minutes, the etching occurs excessively (over etching), which is not preferable because the desired shape cannot be obtained and the reflectance becomes high.
    [27] As the isotropic etching solution, in general, any solution used to isotropically etch a semiconductor substrate may be used, and representative examples thereof may be HF, HNO 3 , or a mixture thereof, and may further include phosphoric acid, acetic acid, or water. It may be used, and the mixing ratio thereof may be mixed in an appropriate ratio, and is not particularly limited.
    [28] Subsequently, removing the protector yields a semiconductor substrate 1 having a textured surface (c in FIG. 1).
    [29] As described above, the present invention can apply the protector to the raw material semiconductor substrate by spraying or screen printing, and then isotropically etched, so that the semiconductor substrate can be textured simply and economically. In addition, the shape of the sun can hit the textured surface more than once, thereby reducing the solar reflectance can increase the solar cell efficiency.
    [30] Hereinafter, preferred examples and comparative examples of the present invention are described. However, the following examples are only one preferred embodiment of the present invention and the present invention is not limited to the following examples.
    [31] (Example 1)
    [32] A photoresist solution (trade name: AZ7220, manufactured by Hoechst) was sprayed onto a Si wafer, which is a single crystal semiconductor substrate, using a spray deposition system shown in FIG. At this time, a photoresist was applied to a portion of the single crystal semiconductor substrate in an island form.
    [33] The single-crystal semiconductor substrate partially coated with the photoresist was immersed in an isotropic etching solution, which is a mixed solution of HF and HNO (1:40 vol. Ratio), for 10 minutes to etch the portion where the photoresist was not applied.
    [34] The photoresist was removed from the etched semiconductor substrate to fabricate a textured solar substrate.
    [35] (Example 2)
    [36] It carried out similarly to Example 1 except having used the polycrystal Si substrate instead of the single crystal Si wafer as a raw material semiconductor substrate.
    [37] (Comparative Example 1)
    [38] A Si wafer, a single crystal semiconductor substrate, was textured by dipping for 2 minutes in an isotropic etching solution of a mixed solution of HF, HNO 3 and H 3 PO 4 ( HF: HNO 3: H 3 PO 4 = 12: 1: 12 by volume). The substrate was prepared.
    [39] (Comparative Example 2)
    [40] Using an anisotropic etching solution of KOH and isopropyl alcohol as an etching solution, it was carried out in the same manner as in Comparative Example 1 except that it was immersed for 20 minutes.
    [41] (Comparative Example 3)
    [42] The Si wafer was carried out in the same manner as in Comparative Example 2 except that polycrystal was used.
    [43] (Comparative Example 4)
    [44] The single crystal silicon wafer was oxidized to form an oxide film on the surface. A photoresist was applied to the oxide film, and the oxide film was patterned using a mask and an exposure machine. Subsequently, the oxide film was opened using an etching solution, the silicon wafer with the oxide film opened with a KOH solution was etched, and the oxide film was removed to prepare a textured semiconductor substrate.
    [45] (Comparative Example 5)
    [46] The polycrystalline silicon wafer was subjected to an oxidation process to form an oxide film on the surface. After the photoresist was applied to the oxide film, the oxide film was patterned using a mask and an exposure machine. Subsequently, the oxide film was opened using an etching solution, and the silicon substrate with the oxide film opened with the anisotropic etching solution was etched. Subsequently, the oxide film was removed to form a textured semiconductor substrate.
    [47] The reflectance of the semiconductor substrate for solar cells manufactured by the methods of Examples 1 to 2 and Comparative Examples 1 to 5 was measured, and the results are shown in Table 1 below.
    [48] reflectivity[%] Example 19 Example 29 Comparative Example 122.4 Comparative Example 229 Comparative Example 312 Comparative Example 411 Comparative Example 518
    [49] As shown in Table 1, since the semiconductor substrate for solar cells manufactured by the method of Examples 1 to 2 has a very low reflectance than Comparative Examples 1 to 5 it can be produced a solar cell of high efficiency.
    [50] As described above, the method of the present invention can texture the semiconductor substrate for solar cells with an inexpensive isotropic etching solution and a simple process, and the textured semiconductor substrate has a reflectance of about 9% compared to the conventional method (reflectance: 11-29%). Is very low. Therefore, a highly efficient solar cell can be manufactured.
    权利要求:
    Claims (4)
    [1" claim-type="Currently amended] Spraying or screen printing a protector onto the semiconductor substrate to apply the protector to a portion of the semiconductor substrate;
    Etching the portion where the protector is not partially coated by immersing the semiconductor substrate partially coated with the protector in an isotropic etching solution;
    To remove the protector
    The texturing method of the semiconductor substrate for solar cells containing a process.
    [2" claim-type="Currently amended] The texturing method of claim 1, wherein the protector is an organic material and an inorganic metal oxide.
    [3" claim-type="Currently amended] The method of claim 1 wherein the area of the semiconductor substrate to which the protector is applied is less than 10% of the total semiconductor substrate area.
    [4" claim-type="Currently amended] The texturing method of claim 1, wherein the isotropic etching solution is an acid solution.
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    同族专利:
    公开号 | 公开日
    US20020119290A1|2002-08-29|
    KR100378016B1|2003-03-29|
    JP2002217439A|2002-08-02|
    US6663944B2|2003-12-16|
    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    法律状态:
    2001-01-03|Application filed by 김순택, 삼성에스디아이 주식회사
    2001-01-03|Priority to KR20010000251A
    2002-07-12|Publication of KR20020059185A
    2003-03-29|Application granted
    2003-03-29|Publication of KR100378016B1
    优先权:
    申请号 | 申请日 | 专利标题
    KR20010000251A|KR100378016B1|2001-01-03|2001-01-03|Method of texturing semiconductor substrate for solar cell|
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